Red and UV generation using frequency-converted GaInNAs-based semiconductor disk laser

Author

Rautiainen, Jussi ; Härkönen, Antti ; Korpijärvi, Ville-Markus ; Puustinen, Janne ; Orsila, Lasse ; Guina, Mircea ; Okhotnikov, Oleg G.

Author_Institution

Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We report on the intracavity frequency-doubling of a GaInNAs/GaAs disk laser. The laser operated at 1220 nm and delivered 4.6 W of power at ~610 nm. The red emission was further frequency-doubled to 305 nm.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; nitrogen compounds; optical harmonic generation; semiconductor lasers; GaInNAs; GaInNAs-GaAs; UV generation; frequency-converted semiconductor disk laser; intracavity optical frequency-doubling; power 4.6 W; red generation; wavelength 1220 nm; wavelength 305 nm; Chemical lasers; Frequency; Gallium arsenide; Heat sinks; Mirrors; Power lasers; Quantum cascade lasers; Semiconductor lasers; Surface emitting lasers; Water heating; (140.3515) Lasers, frequency doubled; (140.3610) Lasers, ultraviolet; (140.5960) Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225789