Title :
1528 nm GaInNAsSb/GaAs vertical cavity surface emitting lasers
Author :
Sarmiento, Tomas ; Bae, Hopil ; O´Sullivan, Thomas D. ; Harris, James S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., Stanford, CA, USA
Abstract :
We present the operation of electrically-injected 1528 nm GaInNAsSb vertical cavity surface emitting lasers grown on GaAs. Pulsed lasing at room temperature and continuous wave lasing at low temperatures are reported for the first time.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical pulse generation; semiconductor growth; surface emitting lasers; GaInNAsSb-GaAs; continuous wave lasing; electrically-injected; lasers grown; vertical cavity surface emitting lasers; wavelength 1528 nm; Annealing; Apertures; Distributed Bragg reflectors; Gallium arsenide; Optical surface waves; Semiconductor lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers; (140.5960) Semiconductor lasers; (140.7260) Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
