Title :
GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer
Author :
Feltin, Eric ; Castiglia, A. ; Cosendey, G. ; Carlin, J.-F. ; Butté, R. ; Grandjean, N.
Author_Institution :
Inst. of Quantum Electron. & Photonics, Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Abstract :
Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415 nm is observed at 300 K with a threshold current density of 7.5 kA/cm2 and a peak power of 140 mW at 1.2 A.
Keywords :
III-V semiconductors; aluminium compounds; claddings; gallium compounds; laser beams; optical fabrication; quantum well lasers; wide band gap semiconductors; Al0.83In0.17N-GaN; current 1.2 A; laser diodes; lattice-matched cladding layer; nitride blue laser fabrication; power 140 mW; temperature 300 K; threshold current density; wavelength 415 nm; Aluminum gallium nitride; Diode lasers; Gallium nitride; Optical devices; Optical refraction; Optical superlattices; Optical variables control; Power lasers; Semiconductor lasers; Threshold current; (140.0140) Lasers and Lasers optics; (140.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
