GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Author

Feltin, Eric ; Castiglia, A. ; Cosendey, G. ; Carlin, J.-F. ; Butté, R. ; Grandjean, N.

Author_Institution

Inst. of Quantum Electron. & Photonics, Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415 nm is observed at 300 K with a threshold current density of 7.5 kA/cm² and a peak power of 140 mW at 1.2 A.

Keywords

III-V semiconductors; aluminium compounds; claddings; gallium compounds; laser beams; optical fabrication; quantum well lasers; wide band gap semiconductors; Al_0.83In_0.17N-GaN; current 1.2 A; laser diodes; lattice-matched cladding layer; nitride blue laser fabrication; power 140 mW; temperature 300 K; threshold current density; wavelength 415 nm; Aluminum gallium nitride; Diode lasers; Gallium nitride; Optical devices; Optical refraction; Optical superlattices; Optical variables control; Power lasers; Semiconductor lasers; Threshold current; (140.0140) Lasers and Lasers optics; (140.5960) Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225792