Title :
A Ge-on-Si laser for electronic-photonic integration
Author :
Sun, Xiaochen ; Liu, Jifeng ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution :
Microphotonic Center, Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects and communications.
Keywords :
optical communication; optical interconnections; photoluminescence; semiconductor lasers; Ge-on-Si laser; direct band gap transition; electronic-photonic integration; optical communications; optical gain; optical interconnects; photoluminescence; temperature 293 K to 298 K; Doping; Laser transitions; Optical films; Optical interconnections; Optical pumping; Photonic band gap; Power lasers; Semiconductor lasers; Temperature; Tensile strain; (250.0250) Optoelectronics; (250.5960) Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
