Title :
Lasing in optically pumped Ga(NAsP)/(BGa)(AsP) heterostructures on silicon
Author :
Lange, C. ; Köster, N.S. ; Franzbach, D.J. ; Chatterjee, S. ; Rühle, W.W. ; Zinnkann, S. ; Liebich, S. ; Németh, I. ; Fritz, R. ; Volz, K. ; Stolz, W. ; Kunert, B. ; Gerhardt, N.C. ; Koukourakis, N. ; Hofmann, M.
Author_Institution :
Fac. of Phys. & Mater. Sci. Center, Philipps-Univ. Marburg, Marburg, Germany
Abstract :
We report lasing of optically pumped Ga(NAsP)/(BGa)(AsP) heterostructures grown lattice-matched on Si. Modal gain of up to 80 cm-1 is determined at 300 K and a distinct threshold behaviour and mode spectrum is observed up to 100 K.
Keywords :
III-V semiconductors; boron compounds; gallium arsenide; gallium compounds; laser modes; optical pumping; quantum well lasers; Ga(NAsP)-(BGa)(AsP); Si; heterostructures; lasing; lattice matching; modal gain; mode spectrum; multiple quantum-well laser; optical pumping; temperature 300 K; Laser excitation; Lattices; Optical films; Optical materials; Optical pulses; Optical pumping; Photonic band gap; Pulse amplifiers; Silicon; Temperature; (140.5960) semiconductor lasers; (300.6470) semiconductor spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
