Experimental evidence of single-phonon mediated inter-level excitonic transitions in a semiconductor quantum dot

Author

Flagg, Edward B. ; Robertson, John W. ; Founta, Sebastien ; Ma, Wenquan ; Xiao, Min ; Salamo, Gregory J. ; Shih, Chih-Kang

Author_Institution

Dept. of Phys., Univ. of Texas at Austin, Austin, TX, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

Resonance fluorescence of a single InGaAs/GaAs quantum dot enables us to show direct evidence of population up-conversion to an excited state in a quantum dot, which we attribute to single-acoustic-phonon processes at low temperature.

Keywords

III-V semiconductors; excited states; excitons; fluorescence; gallium arsenide; indium compounds; optical materials; semiconductor quantum dots; InGaAs-GaAs; InGaAs/GaAs quantum dot; excited state; interlevel excitonic transitions; population up-conversion; resonance fluorescence; semiconductor quantum dot; single-acoustic-phonon process; Excitons; Fluorescence; Gallium arsenide; Phonons; Physics; Quantum dots; Resonance; Spectroscopy; Stationary state; Temperature dependence; (160.6000) Semiconductor materials; (260.5740) Resonance; (300.6250) Spectroscopy, condensed matter;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225836