Title :
GaAs nanoneedle photodetector monolithically grown on a (111) Si substrate by MOCVD
Author :
Chuang, Linus C. ; Chase, Chris ; Moewe, Michael ; Ng, Kar Wei ; Crankshaw, Shanna ; Chang-Hasnain, Connie
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
P-n junction GaAs nanoneedle photodetectors are monolithically grown on a (111) Si substrate by MOCVD with CMOS compatibility. A linear response of the photocurrent to the irradiance can be obtained under room temperature operation.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOCVD; gallium arsenide; nanostructured materials; p-n junctions; photodetectors; silicon; substrates; CMOS compatibility; GaAs; MOCVD; Si; nanoneedle photodetector; p-n junction; photocurrent; silicon substrate; temperature 293 K to 298 K; Gallium arsenide; Gold; MOCVD; Neural networks; P-n junctions; Photoconductivity; Photodetectors; Substrates; Temperature; Voltage; (160.6000) Semiconductors materials; (250.0040) Detectors;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
