Title :
Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells
Author :
Leonard, J.R. ; Yang, Sen ; Butov, L.V. ; Gossard, A.C.
Author_Institution :
Dept. of Phys., Univ. of California at San Diego, La Jolla, CA, USA
Abstract :
Spin transport of indirect excitons in GaAs/AlGaAs CQW was observed by measuring the spatially resolved circular polarization of exciton emission. This originates from the long spin relaxation time and long lifetime of indirect excitons.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; polarisation; semiconductor quantum wells; GaAs-AlGaAs; circular polarization; coupled quantum wells; exciton emission; indirect excitons; spin relaxation time; spin transport; Charge carrier processes; Clouds; Electron optics; Excitons; Gallium arsenide; Laser excitation; Optical polarization; Physics; Spatial resolution; Stimulated emission; (230.5590) Quantum-well, -wire and -dot devices; (300.6470) Spectroscopy, semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
