Title :
All fiber narrow linewidth high power bismuth doped fiber amplifier at 1179 nm
Author :
Kalita, Mridu P. ; Yoo, Seongwoo ; Sahu, Jayanta
Author_Institution :
Optoelectron. Res. Centre, Univ. of Southampton, Southampton, UK
Abstract :
We investigated the performance of Bi-doped fiber amplifier at 1179 nm, in both low and high input signal regime, when pumped at 1090 nm. The amplifier efficiency and the saturation power both depend on the fiber cooling.
Keywords :
bismuth; laser beams; optical fibre amplifiers; optical pumping; optical saturation; JkJk:Bi; all fiber narrow linewidth laser; fiber cooling; high power bismuth doped fiber amplifier efficiency; input signal regime; optical pumping; saturation power; wavelength 1090 nm; wavelength 1179 nm; Bismuth; Cooling; Doped fiber amplifiers; High power amplifiers; Optical amplifiers; Optical fiber amplifiers; Power amplifiers; Power generation; Semiconductor optical amplifiers; Stimulated emission; (060.2320) Fiber optics amplifiers and oscillators; (160.2290) Fiber materials;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
