DocumentCode :
500517
Title :
Reliability of deep UV LEDs
Author :
Shatalov, M. ; Bilenko, Yu ; Gaska, R. ; Rumyantsev, S.L. ; Shur, M.
Author_Institution :
Sensor Electron. Technol., Inc., Columbia, SC, USA
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
We report on reliability of deep UV (DUV) LEDs with wavelengths ranging from 235 nm to 310 nm. For longer wavelength DUV LEDs, the operation lifetime (50% decrease of output power) exceeds 5,000 hours. The current-voltage characteristics and the emission spectrum remain nearly unchanged during the degradation process. The degradation is sensitive to the operating temperature. The low frequency noise measured at low and high currents either did not depend on aging time or decreased. Possible degradation mechanisms involve the p-cladding layers and p-type contacts being responsible for the degradation. Improvements in light extraction and packaging that should increase the wall plug efficiency are expected to result in a low operating temperature and, hence, in a longer life time.
Keywords :
electrical contacts; light emitting diodes; packaging; semiconductor device reliability; current-voltage characteristics; deep UV LED; degradation process; emission spectrum; light extraction; low frequency noise; p-cladding layers; p-type contacts; packaging; reliability; wavelength 235 nm to 310 nm; Current measurement; Current-voltage characteristics; Degradation; Frequency measurement; Light emitting diodes; Low-frequency noise; Noise measurement; Power generation; Temperature sensors; Time measurement; 230.3670; 230.4170; 230.6080;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5225926
Link To Document :
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