Time-resolved photoluminescence studies of AlGaN-based deep UV LED structures emitting down to 229 nm

Author

Garrett, Gregory A. ; Moe, Craig G. ; Reed, Meredith L. ; Wraback, Michael ; Sun, Wenhong ; Shatalov, Max ; Hu, Xuhong ; Yang, Jinwei ; Bilenko, Yuriy ; Lunev, Alex ; Shur, Michael S. ; Gaska, Remis

Author_Institution

Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

Photoluminescence lifetime and internal quantum efficiency measurements of deep ultraviolet (~230 nm) light-emitting diode structures are correlated to packaged devices and compared to measurements on more mature 280 nm structures.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; photoluminescence; radiative lifetimes; time resolved spectra; wide band gap semiconductors; AlGaN; cw-operation mode; deep UV LED structure; deep ultraviolet light-emitting diode structure; quantum efficiency measurement; time-resolved photoluminescence; Laser excitation; Light emitting diodes; Optical pulses; Optical sensors; Packaging; Photoluminescence; Pulse amplifiers; Pump lasers; Stimulated emission; Voltage; (230.3670) Light-emitting diodes; (300.6500) Spectroscopy, time-resolved;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225934