DocumentCode
500528
Title
Silicon-nitride surface passivation of sub-micron silicon waveguides for low-power optical switches
Author
Van Campenhout, Joris ; Green, William M J ; Assefa, Solomon ; Vlasov, Yurii A. ; Liu, Xiaoping ; Osgood, Richard M., Jr.
Author_Institution
T.J. Watson Res. Center, IBM Res., Yorktown Heights, NY, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We achieved a two-orders-of-magnitude improvement of free carrier lifetimes in sub-micron silicon-on-insulator waveguides by applying a stoichiometric Si3N4 coating. Such surface passivation is critical for low-power operation of carrier-injected optical switches.
Keywords
carrier lifetime; optical switches; optical waveguides; passivation; Si; carrier-injected optical switches; low-power optical switches; sub-micron silicon waveguides; surface passivation; Charge carrier lifetime; Network-on-a-chip; Optical surface waves; Optical switches; Optical waveguides; Passivation; Probes; Resonance; Silicon; Surface waves; (200.4650) Optical interconnects; (250.6715) Switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225938
Link To Document