DocumentCode :
500528
Title :
Silicon-nitride surface passivation of sub-micron silicon waveguides for low-power optical switches
Author :
Van Campenhout, Joris ; Green, William M J ; Assefa, Solomon ; Vlasov, Yurii A. ; Liu, Xiaoping ; Osgood, Richard M., Jr.
Author_Institution :
T.J. Watson Res. Center, IBM Res., Yorktown Heights, NY, USA
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
We achieved a two-orders-of-magnitude improvement of free carrier lifetimes in sub-micron silicon-on-insulator waveguides by applying a stoichiometric Si3N4 coating. Such surface passivation is critical for low-power operation of carrier-injected optical switches.
Keywords :
carrier lifetime; optical switches; optical waveguides; passivation; Si; carrier-injected optical switches; low-power optical switches; sub-micron silicon waveguides; surface passivation; Charge carrier lifetime; Network-on-a-chip; Optical surface waves; Optical switches; Optical waveguides; Passivation; Probes; Resonance; Silicon; Surface waves; (200.4650) Optical interconnects; (250.6715) Switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5225938
Link To Document :
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