• DocumentCode
    500528
  • Title

    Silicon-nitride surface passivation of sub-micron silicon waveguides for low-power optical switches

  • Author

    Van Campenhout, Joris ; Green, William M J ; Assefa, Solomon ; Vlasov, Yurii A. ; Liu, Xiaoping ; Osgood, Richard M., Jr.

  • Author_Institution
    T.J. Watson Res. Center, IBM Res., Yorktown Heights, NY, USA
  • fYear
    2009
  • fDate
    2-4 June 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We achieved a two-orders-of-magnitude improvement of free carrier lifetimes in sub-micron silicon-on-insulator waveguides by applying a stoichiometric Si3N4 coating. Such surface passivation is critical for low-power operation of carrier-injected optical switches.
  • Keywords
    carrier lifetime; optical switches; optical waveguides; passivation; Si; carrier-injected optical switches; low-power optical switches; sub-micron silicon waveguides; surface passivation; Charge carrier lifetime; Network-on-a-chip; Optical surface waves; Optical switches; Optical waveguides; Passivation; Probes; Resonance; Silicon; Surface waves; (200.4650) Optical interconnects; (250.6715) Switching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-869-8
  • Electronic_ISBN
    978-1-55752-869-8
  • Type

    conf

  • Filename
    5225938