Title :
Fabrication of highly stacked quantum dot laser
Author :
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan
Abstract :
We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.
Keywords :
III-V semiconductors; indium compounds; optical fabrication; quantum dot lasers; InAs; broad-area laser diodes fabrication; current 517.5 mA; laser emission; quantum dot laser fabrication; strain-compensation technique; wavelength 1529 nm; Atomic force microscopy; Capacitive sensors; Indium phosphide; Laser modes; Lattices; Optical device fabrication; Quantum dot lasers; Semiconductor lasers; Substrates; Temperature; (140.5960) Semiconductor lasers; (250.5590) Quantum-well, -wire and -dot devices;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
