Title :
Recent progresses of AlGaN and InAlGaN-based deep-UV LEDs
Author :
Hirayama, Hideki
Author_Institution :
RIKEN, Wako, Japan
Abstract :
We demonstrated 222-282 nm AlGaN and InAlGaN-based efficient deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN. We achieved over 10 mW CW UV output power for 264-282 nm LEDs.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; gallium compounds; indium compounds; light emitting diodes; optical fabrication; semiconductor quantum wells; AlN; InAlGaN; deep-ultraviolet light-emitting diode; electroluminescence; optical fabrication; power 10 mW; quantum wells; threading dislocation density; wavelength 222 nm to 282 nm; Aluminum gallium nitride; Diode lasers; Electroluminescence; Light emitting diodes; Nonhomogeneous media; Optical buffering; Optical materials; Power generation; Semiconductor materials; Transmission electron microscopy; (160.6000) Semiconductor materials; (230.3670) Light-emitting diodes;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
