Title :
Polarization-enhanced Mg doping in InGaN/GaN superlattice for green light-emitting diodes
Author :
Lin, Hung-Cheng ; Lee, Geng-Yen ; Liu, Hsueh-Hsing ; Hsu, Nai-Wei ; Wu, Chin-Chi ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
Electrical properties of low-temperature grown Mg-modulation-doped InGaN/GaN superlattice (MD-SLS) for green light-emitting diodes (LEDs) are investigated. Room-temperature Hall effect measurements indicate that the MD-SLS has conductivity comparable to that of high-temperature grown p-type GaN. The light output intensity of green LEDs with the p-InGaN/GaN MD-SLS is approximately doubled as compared with that of the LEDs with a high-temperature grown p-GaN.
Keywords :
Hall effect; III-V semiconductors; electrical conductivity; gallium compounds; indium compounds; light emitting diodes; magnesium; quantum well devices; semiconductor doping; Hall effect; InGaN-GaN:Mg; Mg-modulation-doped superlattice; conductivity; electrical properties; green light-emitting diodes; high-temperature grown p-GaN; light output intensity; low-temperature growth; multiple quantum wells; polarization-enhanced Mg doping; room-temperature measurements; temperature 293 K to 298 K; Atomic force microscopy; Conductivity; Doping; Epitaxial layers; Gallium nitride; Laser sintering; Light emitting diodes; Optical polarization; Optical superlattices; Surface morphology; (230.3670) Light-emitting diodes; (250.5590) Quantum-well, -wire and -dot devices;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
