DocumentCode :
500582
Title :
Optical microcavities on si formed by self-assembled InGaAs/GaAs quantum dot microtubes
Author :
Sahmuganathan, V. ; Li, F. ; Mi, Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
We have investigated the fabrication and characterization of 3-dimensionally confined optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes. Such microcavities on Si are free of defects and exhibit a Q-factor of 3,000.
Keywords :
III-V semiconductors; Q-factor; elemental semiconductors; gallium arsenide; indium compounds; micro-optics; microcavities; optical fabrication; self-assembly; semiconductor quantum dots; silicon; InGaAs-GaAs; InGaAs/GaAs quantum dot microtubes; Q-factor; Si; optical microcavities; self-assembly; Gallium arsenide; High speed optical techniques; Indium gallium arsenide; Microcavities; Optical films; Optical pumping; Optical ring resonators; Quantum dots; Stimulated emission; Substrates; 230.3990 Micro-optical devices; 250.5590 Quantum-well, -wire and -dot devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5225994
Link To Document :
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