Title :
1.3µm electroabsorption modulator with InAs/InGaAs/GaAs quantum dots
Author :
Ngo, C.Y. ; Yoon, S.F. ; Loke, W.K. ; Cao, Q. ; Lim, D.R. ; Wong, Vincent ; Sim, Y.K. ; Chua, S.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Electroabsorption properties of 1.3mum InAs/InGaAs/GaAs quantum dot electroabsorption modulator (EAM) are investigated. Onset of absorption to higher electric field suggests the potential to achieve higher optical power handling capability than conventional EAM.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optoelectronic devices; semiconductor quantum dots; InAs-InGaAs-GaAs; electric field; electroabsorption modulator; electroabsorption property; optical power; optoelectronic devices; quantum dot; Absorption; Chirp modulation; Gallium arsenide; Indium gallium arsenide; Laboratories; Optical modulation; Optical waveguides; Quantum dots; Stimulated emission; Superluminescent diodes; 130.0250 Optoelectronics; 250.7360 Waveguide modulators;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
