Light emission polarization properties of a-plane InGaN/GaN quantum wells light emitting diodes

Author

Huang, Hung-Hsun ; Wu, Yuh-Renn

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

This paper discusses the optical characteristics of a nonpolar a-plane InGaN/GaN quantum well (QW) with different indium compositions, QW well widths, and injection carrier densities. We find that the larger indium composition and smaller well width make the energy separation of |Yrang-like state to |Zrang-like state larger, and as a result enhance the polarization ratio of light. However, the polarization ratio decreases as the carrier injection increases, which might be a drawback for high power applications.

Keywords

III-V semiconductors; carrier density; gallium compounds; indium compounds; light emitting diodes; light polarisation; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; QW well width; carrier injection; energy separation; indium composition; injection carrier density; light emission polarization properties; nonpolar a-plane quantum well; quantum well light emitting diode; Capacitive sensors; Charge carrier density; Gallium nitride; Indium; Light emitting diodes; Light sources; Optical polarization; Piezoelectric polarization; Potential well; Stimulated emission; (230.5440) Polarization-selective devices; (250.5590) Quantum-well, -wire and -dot devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5226027