Title :
Two distinct types of dark-line defects in a failed InGaAs/AlGaAs strained quantum well laser diode
Author :
Foran, Brendan ; Presser, Nathan ; Sin, Yongkun ; Mason, Maribeth ; Moss, Steve C.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
TEM characterization of accelerated life-test failed InGaAs/AlGaAs quantum well 980 nm laser diodes, prepared by FIB sampling following EBIC, found two distinct types of dark-line defects providing insight for physics of failure models.
Keywords :
III-V semiconductors; aluminium compounds; crystal defects; gallium arsenide; indium compounds; laser beams; quantum well lasers; transmission electron microscopy; EBIC; FIB sampling; InGaAs-AlGaAs; TEM characterization; accelerated life-test; dark-line defect; electron beam induced current; quantum well laser diode; wavelength 980 nm; Acceleration; Diode lasers; Indium gallium arsenide; Laser modes; Laser theory; Optical pumping; Physics; Pump lasers; Quantum well lasers; Semiconductor lasers; (140.5960) Semiconductor lasers; (230.5590) Quantum-well devices;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
