Ultrafast dynamics of band-edge photonic crystals lasers

Author

Raineri, Fabrice ; Yacomotti, Alejandro M. ; Karle, Timothy J. ; Beveratos, Alexios ; Sagnes, Isabelle ; Raj, Rama

Author_Institution

Lab. de Photonique et de Nanostruct., Marcoussis, France

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

Temporal characteristics of band-edge photonic crystal lasers were explored with high resolution up-conversion system. The InGaAs/InP photonic crystal laser operates at room temperature at 1.55 mum with temporal responses indicating modulation speeds greater than 25 GHz.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser beams; optical modulation; photonic crystals; semiconductor lasers; InGaAs-InP; band-edge photonic crystals laser ultrafast dynamics; high resolution up-conversion system; optical modulation; temperature 293 K to 298 K; temporal responses; wavelength 1.55 mum; Indium phosphide; Laser modes; Laser theory; Lattices; Optical modulation; Optical refraction; Optical resonators; Photonic crystals; Pump lasers; Slabs; (140.3460) Lasers; (230.5298) Optical devices: Photonic crystal;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5226034