DocumentCode :
500620
Title :
Ultrafast dynamics of band-edge photonic crystals lasers
Author :
Raineri, Fabrice ; Yacomotti, Alejandro M. ; Karle, Timothy J. ; Beveratos, Alexios ; Sagnes, Isabelle ; Raj, Rama
Author_Institution :
Lab. de Photonique et de Nanostruct., Marcoussis, France
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
Temporal characteristics of band-edge photonic crystal lasers were explored with high resolution up-conversion system. The InGaAs/InP photonic crystal laser operates at room temperature at 1.55 mum with temporal responses indicating modulation speeds greater than 25 GHz.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser beams; optical modulation; photonic crystals; semiconductor lasers; InGaAs-InP; band-edge photonic crystals laser ultrafast dynamics; high resolution up-conversion system; optical modulation; temperature 293 K to 298 K; temporal responses; wavelength 1.55 mum; Indium phosphide; Laser modes; Laser theory; Lattices; Optical modulation; Optical refraction; Optical resonators; Photonic crystals; Pump lasers; Slabs; (140.3460) Lasers; (230.5298) Optical devices: Photonic crystal;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5226034
Link To Document :
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