GaAs-based transverse junction superluminescent diode at 1.1um wavelength region

Author

Guol, Shi-Hao ; Chou, Ming-Ge ; Wang, Jr-Hung ; Yang, Ying-Jay ; Sun, Chi-Kuang ; Shi, Jin-Wei

Author_Institution

Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We report GaAs-based transverse-junction-superluminescent-diodes, characterized as transverse-carrier-flow spread in quantum wells horizontally instead of vertical well-by-well injection. These devices overcome the problem of non-uniform-carrier-distribution and operate at a bio-optical window of 1.1-mum wavelength regime.

Keywords

III-V semiconductors; gallium arsenide; semiconductor quantum wells; superluminescent diodes; GaAs; nonuniform carrier distribution; quantum wells; transverse junction superluminescent diode; transverse-carrier-flow spread; vertical well-by-well injection; wavelength 1.1 mum; Bandwidth; Biomedical optical imaging; Chirp; Epitaxial layers; Gallium arsenide; Light emitting diodes; Optical devices; Pulse measurements; Quantum well devices; Superluminescent diodes; (230.3670) Light-emitting diodes; (250.5980) Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5226042