O-band InAs/InGaAs quantum dot laser diode with sandwiched sub-nano separator (SSNS) structures

Author

Yamamoto, Naokatsu ; Fujioka, Hiroki ; Akahane, Kouichi ; Katouf, Redouane ; Kawanishi, Tetsuya ; Takai, Hiroshi ; Sotobayashi, Hideyuki

Author_Institution

Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; nanophotonics; nanostructured materials; photoluminescence; quantum dot lasers; sandwich structures; GaAs; InAs-InGaAs; O-band quantum dot laser diode; SSNS technique; crystal quality; luminescence intensity enhancement; sandwiched sub-nano separator structure; Diode lasers; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical fiber communication; Particle separators; Quantum dot lasers; Semiconductor lasers; Substrates; (060.2330) Fiber optics communications; (140.5960) Semiconductor lasers; (250.5590) Quantum-well, -wire and -dot devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5226125