• DocumentCode
    500847
  • Title

    Fault models for embedded-DRAM macros

  • Author

    Chao, Mango C T ; Yang, Hao-Yu ; Huang, Rei-Fu ; Lin, Shih-Chin ; Chin, Ching-Yu

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    26-31 July 2009
  • Firstpage
    714
  • Lastpage
    719
  • Abstract
    In this paper, we compare embedded-DRAM (eDRAM) testing to both SRAM testing and commodity-DRAM testing, since an eDRAM macro uses DRAM cells with an SRAM interface. We first start from an standard SRAM test algorithm and discuss the faults which are not covered in the SRAM testing but should be considered in the DRAM testing. Then we study the behavior of those faults and the tests which can detect them. Also, we discuss how likely each modeled fault may occur on eDRAMs and commodity DRAMs, respectively.
  • Keywords
    DRAM chips; SRAM chips; embedded systems; macros; SRAM testing; embedded-DRAM macro; fault model; Chaos; Circuit faults; Circuit testing; Delay; Electronic equipment testing; Frequency; MIM capacitors; Permission; Random access memory; System testing; Memory testing; embedded DRAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference, 2009. DAC '09. 46th ACM/IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    0738-100X
  • Print_ISBN
    978-1-6055-8497-3
  • Type

    conf

  • Filename
    5227104