Title :
Fault models for embedded-DRAM macros
Author :
Chao, Mango C T ; Yang, Hao-Yu ; Huang, Rei-Fu ; Lin, Shih-Chin ; Chin, Ching-Yu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, we compare embedded-DRAM (eDRAM) testing to both SRAM testing and commodity-DRAM testing, since an eDRAM macro uses DRAM cells with an SRAM interface. We first start from an standard SRAM test algorithm and discuss the faults which are not covered in the SRAM testing but should be considered in the DRAM testing. Then we study the behavior of those faults and the tests which can detect them. Also, we discuss how likely each modeled fault may occur on eDRAMs and commodity DRAMs, respectively.
Keywords :
DRAM chips; SRAM chips; embedded systems; macros; SRAM testing; embedded-DRAM macro; fault model; Chaos; Circuit faults; Circuit testing; Delay; Electronic equipment testing; Frequency; MIM capacitors; Permission; Random access memory; System testing; Memory testing; embedded DRAM;
Conference_Titel :
Design Automation Conference, 2009. DAC '09. 46th ACM/IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-6055-8497-3