DocumentCode
500847
Title
Fault models for embedded-DRAM macros
Author
Chao, Mango C T ; Yang, Hao-Yu ; Huang, Rei-Fu ; Lin, Shih-Chin ; Chin, Ching-Yu
Author_Institution
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear
2009
fDate
26-31 July 2009
Firstpage
714
Lastpage
719
Abstract
In this paper, we compare embedded-DRAM (eDRAM) testing to both SRAM testing and commodity-DRAM testing, since an eDRAM macro uses DRAM cells with an SRAM interface. We first start from an standard SRAM test algorithm and discuss the faults which are not covered in the SRAM testing but should be considered in the DRAM testing. Then we study the behavior of those faults and the tests which can detect them. Also, we discuss how likely each modeled fault may occur on eDRAMs and commodity DRAMs, respectively.
Keywords
DRAM chips; SRAM chips; embedded systems; macros; SRAM testing; embedded-DRAM macro; fault model; Chaos; Circuit faults; Circuit testing; Delay; Electronic equipment testing; Frequency; MIM capacitors; Permission; Random access memory; System testing; Memory testing; embedded DRAM;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference, 2009. DAC '09. 46th ACM/IEEE
Conference_Location
San Francisco, CA
ISSN
0738-100X
Print_ISBN
978-1-6055-8497-3
Type
conf
Filename
5227104
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