DocumentCode
500942
Title
Selective wordline voltage boosting for caches to manage yield under process variations
Author
Pan, Yan ; Kong, Joonho ; Ozdemir, Serkan ; Memik, Gokhan ; Chung, Sung Woo
Author_Institution
Northwestern Univ., Evanston, IL, USA
fYear
2009
fDate
26-31 July 2009
Firstpage
57
Lastpage
62
Abstract
One of the most important hurdles of technology scaling is process variations, i.e., variations in device characteristics. Process variations cause large fluctuations in performance and power consumption in the manufactured chips. In addition, these fluctuations cause reductions in the chip yields. In this work, we present an analysis of a representative high-performance processor architecture and show that the caches have the highest probability of causing yield losses under process variations. We then propose a novel selective wordline voltage boosting mechanism that aims at reducing the latency of the cache lines that are affected by process variations. We show that our approach can eliminate over 80% of the yield losses under medium level of variations, while incurring less than 1% per-access energy overhead on average and less than 4.5% area overhead.
Keywords
cache storage; power aware computing; caches; high performance processor architecture; process variations; selective wordline voltage boosting; technology scaling; Boosting; Costs; Delay; Energy consumption; Fluctuations; Manufacturing processes; Permission; Random access memory; Redundancy; Threshold voltage; Access Time Failure; Cache; Process Variations; Selective Wordline Voltage Boosting; Yield;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference, 2009. DAC '09. 46th ACM/IEEE
Conference_Location
San Francisco, CA
ISSN
0738-100X
Print_ISBN
978-1-6055-8497-3
Type
conf
Filename
5227200
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