• DocumentCode
    500942
  • Title

    Selective wordline voltage boosting for caches to manage yield under process variations

  • Author

    Pan, Yan ; Kong, Joonho ; Ozdemir, Serkan ; Memik, Gokhan ; Chung, Sung Woo

  • Author_Institution
    Northwestern Univ., Evanston, IL, USA
  • fYear
    2009
  • fDate
    26-31 July 2009
  • Firstpage
    57
  • Lastpage
    62
  • Abstract
    One of the most important hurdles of technology scaling is process variations, i.e., variations in device characteristics. Process variations cause large fluctuations in performance and power consumption in the manufactured chips. In addition, these fluctuations cause reductions in the chip yields. In this work, we present an analysis of a representative high-performance processor architecture and show that the caches have the highest probability of causing yield losses under process variations. We then propose a novel selective wordline voltage boosting mechanism that aims at reducing the latency of the cache lines that are affected by process variations. We show that our approach can eliminate over 80% of the yield losses under medium level of variations, while incurring less than 1% per-access energy overhead on average and less than 4.5% area overhead.
  • Keywords
    cache storage; power aware computing; caches; high performance processor architecture; process variations; selective wordline voltage boosting; technology scaling; Boosting; Costs; Delay; Energy consumption; Fluctuations; Manufacturing processes; Permission; Random access memory; Redundancy; Threshold voltage; Access Time Failure; Cache; Process Variations; Selective Wordline Voltage Boosting; Yield;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference, 2009. DAC '09. 46th ACM/IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    0738-100X
  • Print_ISBN
    978-1-6055-8497-3
  • Type

    conf

  • Filename
    5227200