Title :
Swarm intelligence - Based small signal parameters extraction for PHEMT
Author :
Tayel, Mazhar B. ; Yassin, Amr H.
Author_Institution :
Fac. of Eng., Alexandria Univ., Alexandria, Egypt
Abstract :
A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a small-signal model are determined using particle swarm population-based search method as a global search and optimization tool. The parameters extraction of the small-signal model is performed on 200 mum gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18-elements model are determined directly from the measured S- parameters. The optimizer is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.The validity of the proposed small signal model is verified by comparing the simulated small signal S-parameters with the measured data of a 0.25 mum by 200 mum gate PHEMT.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; particle swarm optimisation; semiconductor device models; AlGaAs-InGaAs; S-parameters; extrinsic circuit elements; frequency 0.5 GHz to 18 GHz; intrinsic circuit elements; particle swarm population-based search method; pseudomorphic high electron mobility transistor PHEMT; size 0.25 mum; size 200 mum; small-signal model; swarm intelligence-based small signal parameters extraction; Circuits; Electron mobility; HEMTs; Indium gallium arsenide; MODFETs; Optimization methods; PHEMTs; Parameter extraction; Particle swarm optimization; Search methods; PHEMT; optimization; parameters extraction; particle swarm optimization;
Conference_Titel :
Radio Science Conference, 2009. NRSC 2009. National
Conference_Location :
New Cairo
Print_ISBN :
978-1-4244-4214-0
