Compact Modeling of Nanoscale Trapezoidal FinFETs

Author

Fasarakis, N. ; Karatsori, Theano A. ; Tsormpatzoglou, A. ; Tassis, Dimitrios H. ; Papathanasiou, Kostas ; Bucher, Matthias ; Ghibaudo, Gerard ; Dimitriadis, C.A.

Author_Institution

Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

Volume

61

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

324

Lastpage

332

Abstract

An analytical compact model for the drain current of undoped or lightly doped nanoscale FinFETs with trapezoidal cross section is proposed. The compact model of rectangular FinFETs is extended to trapezoidal FinFETs using equivalent nonplanar device parameters and corner effects. The model has been validated by comparing the results with those of 3-D numerical device simulations. The very good accuracy of the drain current and transcapacitances makes the proposed model suitable for implementation in circuit simulation tools.

Keywords

MOSFET; circuit simulation; doping; semiconductor device models; 3D numerical device simulations; circuit simulation; compact modeling; corner effects; drain current; equivalent nonplanar device parameters; lightly doped nanoscale FinFET; nanoscale trapezoidal FinFET; rectangular FinFET; trapezoidal cross section; undoped nanoscale FinFET; FinFETs; Logic gates; Nanoscale devices; Numerical models; Resistance; Silicon; Solid modeling; Compact modeling; drain current; nanoscale trapezoidal FinFETs; transcapacitances;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2284503

Filename

6632876