Title :
Compact Modeling of Nanoscale Trapezoidal FinFETs
Author :
Fasarakis, N. ; Karatsori, Theano A. ; Tsormpatzoglou, A. ; Tassis, Dimitrios H. ; Papathanasiou, Kostas ; Bucher, Matthias ; Ghibaudo, Gerard ; Dimitriadis, C.A.
Author_Institution :
Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Abstract :
An analytical compact model for the drain current of undoped or lightly doped nanoscale FinFETs with trapezoidal cross section is proposed. The compact model of rectangular FinFETs is extended to trapezoidal FinFETs using equivalent nonplanar device parameters and corner effects. The model has been validated by comparing the results with those of 3-D numerical device simulations. The very good accuracy of the drain current and transcapacitances makes the proposed model suitable for implementation in circuit simulation tools.
Keywords :
MOSFET; circuit simulation; doping; semiconductor device models; 3D numerical device simulations; circuit simulation; compact modeling; corner effects; drain current; equivalent nonplanar device parameters; lightly doped nanoscale FinFET; nanoscale trapezoidal FinFET; rectangular FinFET; trapezoidal cross section; undoped nanoscale FinFET; FinFETs; Logic gates; Nanoscale devices; Numerical models; Resistance; Silicon; Solid modeling; Compact modeling; drain current; nanoscale trapezoidal FinFETs; transcapacitances;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2284503
