Title :
The design of sub-threshold reference circuit using resistor temperature compensation
Author :
Li, Luo ; Xiaowei, Cai ; Zheying, Li
Author_Institution :
Sch. of Electron. & Eng., Beijing Jiao Tong Univ., Beijing, China
Abstract :
A reference circuit employing sub-threshold current is presented, which uses two CTAT currents and resistor temperature compensation to generate a reference voltage of 150 mV. Since most of MOSFETs are working at sub-threshold region, the circuit only consumes 976 nW at supply voltage of 1 V with PSRR of -51.68 dB at room temperature using TSMC 0.18 mum technology. The reference voltage´s average temperature coefficient is 26.67ppm/degC in the range [-25, +125]degC and its variation is 3.6 mV/V for supply voltage from 0.8 to 2.5 V.
Keywords :
MOSFET; compensation; reference circuits; resistors; CTAT current; MOSFET; PSRR; TSMC; power 976 nW; reference voltage; resistor temperature compensation; size 0.18 mum; subthreshold reference circuit design; voltage 0.8 V to 2.5 V; voltage 1 V; voltage 150 mV; Circuits; Design engineering; Energy consumption; Intrusion detection; MOSFETs; Mirrors; Power engineering and energy; Resistors; Temperature distribution; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2009. MWSCAS '09. 52nd IEEE International Midwest Symposium on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-4479-3
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2009.5236149
