Title :
Voltage raised in Al2O3 gap of GMR head in the deshunting process
Author :
Siritaratiwat, A. ; Suwannata, N. ; Pinnoi, J. ; Pupaichitkul, C.
Author_Institution :
Dept. of Electr. Eng., Khon Kaen Univ., Khon Kaen, Thailand
Abstract :
In the process of HGA fabrication, a shunting process is performed in order to prevent the ESD effect but when an HGA is required for another process the shunt tab has to be trimmed. This process is thought to cause the damage of GMR heads at the Al2O3 gap between the shunt tab and the substrate. The simulated and measured results are compared to investigate this possibility.
Keywords :
electrostatic discharge; giant magnetoresistance; Al2O3; ESD effect; GMR head; HGA fabrication; deshunting process; electrostatic discharge; giant magnetoresistance; Biological system modeling; Capacitance; Electrical resistance measurement; Electrostatic discharge; Fabrication; Humans; Immune system; Switches; Testing; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
Conference_Location :
Portland, OR
Print_ISBN :
978-1-5853-7039-9
Electronic_ISBN :
978-1-5853-7039-9
