• DocumentCode
    501892
  • Title

    Using thin emitters to control BVce0 effects in punch-through diodes for ESD protection

  • Author

    van Dalen, R. ; Hurkx, G.A.M. ; Zandt, M. A Aint ; Hijzen, E.A. ; Weijs, P.J.W. ; Dekker, A. Den

  • Author_Institution
    Philips Res. Leuven, Leuven, Belgium
  • fYear
    2001
  • fDate
    11-13 Sept. 2001
  • Firstpage
    226
  • Lastpage
    235
  • Abstract
    We present results of a novel punch-through diode structure which uses a thin SiGe emitter to effectively suppress impact-ionization related (BVce0) effects that typically start to dominate the electrical characteristics of conventional punch-through devices at voltages above 2.5..3.0 V, resulting in the occurrence of negative resistances (snap-back) and severely limiting the application range.
  • Keywords
    Ge-Si alloys; electrostatic discharge; ionisation; semiconductor diodes; ESD protection; SiGe; electrical characterisation; impact-ionisation related effects; negative resistances; punch-through diode structure; thin emitters; Bipolar transistors; Capacitance; Current density; Electric breakdown; Electrostatic discharge; Germanium silicon alloys; Protection; Semiconductor diodes; Silicon germanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
  • Conference_Location
    Portland, OR
  • Print_ISBN
    978-1-5853-7039-9
  • Electronic_ISBN
    978-1-5853-7039-9
  • Type

    conf

  • Filename
    5254964
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=501892