Title :
Using thin emitters to control BVce0 effects in punch-through diodes for ESD protection
Author :
van Dalen, R. ; Hurkx, G.A.M. ; Zandt, M. A Aint ; Hijzen, E.A. ; Weijs, P.J.W. ; Dekker, A. Den
Author_Institution :
Philips Res. Leuven, Leuven, Belgium
Abstract :
We present results of a novel punch-through diode structure which uses a thin SiGe emitter to effectively suppress impact-ionization related (BVce0) effects that typically start to dominate the electrical characteristics of conventional punch-through devices at voltages above 2.5..3.0 V, resulting in the occurrence of negative resistances (snap-back) and severely limiting the application range.
Keywords :
Ge-Si alloys; electrostatic discharge; ionisation; semiconductor diodes; ESD protection; SiGe; electrical characterisation; impact-ionisation related effects; negative resistances; punch-through diode structure; thin emitters; Bipolar transistors; Capacitance; Current density; Electric breakdown; Electrostatic discharge; Germanium silicon alloys; Protection; Semiconductor diodes; Silicon germanium; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
Conference_Location :
Portland, OR
Print_ISBN :
978-1-5853-7039-9
Electronic_ISBN :
978-1-5853-7039-9
