DocumentCode :
50225
Title :
Design of GaAs Solar Cells Operating Close to the Shockley–Queisser Limit
Author :
Xufeng Wang ; Khan, Mohammad Rezwan ; Gray, Jeffery L. ; Alam, Md. Ashraful ; Lundstrom, Mark S.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume :
3
Issue :
2
fYear :
2013
fDate :
Apr-13
Firstpage :
737
Lastpage :
744
Abstract :
With recent advances in device design, single-junction GaAs solar cells are approaching their theoretical efficiency limits. Accurate numerical simulation may offer insights that can help close the remaining gap between the practical and theoretical limits. Significant care must be taken, however, to ensure that the simulation is self-consistent and properly comprehends thermodynamic limits. In this paper, we use rigorous photon recycling simulation coupled with carrier transport simulation to identify the dominant loss mechanisms that limit the performance of thin-film GaAs solar cells.
Keywords :
III-V semiconductors; electrical resistivity; gallium arsenide; numerical analysis; semiconductor thin films; solar cells; thin film devices; GaAs; Shockley-Queisser Limit; carrier transport simulation; device design; loss mechanisms; numerical simulation; photon recycling simulation; single-junction solar cells; theoretical efficiency limits; thermodynamic limits; thin film solar cells; Absorption; Gallium arsenide; Mirrors; Photovoltaic cells; Radiative recombination; Recycling; Gallium arsenide; photovoltaic cells; solar energy; thin-film devices;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2013.2241594
Filename :
6458975
Link To Document :
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