Analysis of the triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices

Author

Heer, M. ; Bychikhin, S. ; Dubec, V. ; Pogany, D. ; Gornik, E. ; Dissegna, M. ; Cerati, L. ; Zullino, L. ; Andreini, A. ; Tazzoli, A. ; Meneghesso, G.

Author_Institution

Inst. for Solid State Electron., Vienna Univ. of Technol., Vienna, Austria

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

275

Lastpage

284

Abstract

Triggering uniformity and scaling behavior under TLP stress is investigated in single and multi-finger 0.35 mum BCD6 gc-NMOS ESD protection devices. Current flow distribution within a single-finger and over different fingers is analyzed by transient interferometric mapping technique. The steps in IV characteristics are attributed to the particular triggering pattern of fingers. The experiments are validated by TCAD device simulations.

Keywords

MOSFET; electrostatic discharge; technology CAD (electronics); BCD6 gc-NMOS ESD protection devices; TCAD device simulations; TLP stress; current flow distribution; multi-finger; single finger; size 0.35 mum; transient interferometric mapping technique; Coupling circuits; Current distribution; Electrostatic discharge; Electrostatic interference; Fingers; Low voltage; MOS devices; Protection; Temperature distribution; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.

Conference_Location

Anaheim, CA

Print_ISBN

978-1-5853-7115-0

Type

conf

Filename

5256770