Title :
Partially Depleted SOI body-contacted MOSFET-triggered silicon controlled rectifier for ESD protection
Author :
Entringer, C. ; Flatresse, P. ; Galy, Ph ; Azais, F. ; Nouet, P.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper introduces a new efficient SCR ESD protection structure, with both polysilicon gates and body-contacts, in a partially depleted SOI technology. It is shown that a low triggering voltage is obtained thanks to MOSFET triggering, while a low leakage current in the off state can be achieved by biasing PWELL body and the MOSFET gate.
Keywords :
MOSFET; electrostatic discharge; silicon-on-insulator; thyristors; ESD protection; PWELL biasing; body-contacted MOSFET triggering; low-leakage current; partially-depleted SOI technology; polysilicon gates; silicon-controlled rectifier; Anodes; Electrostatic discharge; Leakage current; Low voltage; MOS devices; MOSFET circuits; Protection; Silicon; Thyristors; Transmission lines;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-5853-7115-0
