Title :
Turn-off characteristics of the CMOS snapback ESD protection devices - new insights and its implications
Author :
Vashchenko, V.A. ; Scholz, M. ; Jansen, P. ; Petersen, R. ; Natarajan, M.I. ; Tremouilles, D. ; Sawada, M. ; Nakaei, T. ; Hasebe, T. ; Ter Beek, M. ; Groeseneken, G.
Author_Institution :
Nat. Semicond., Santa Clara, CA, USA
Abstract :
The residual voltage across the ESD snapback protection device after its turn-off is one of the key parameters that must be considered for efficient ESD protection design. Turn-off characteristics of various snapback devices (5VNMOS, 5V LVTSCR and 12V DeMOS-SCR), are analyzed with experimental data for the first time and it is demonstrated that the residual voltage after turn-off is a unique parameter and depends on the type of ESD device, its architecture and layout. The residual voltage after turn-off can vary in a wide range from holding voltage to DC breakdown voltage and is a function of the ESD pulse amplitude. The underlying physical mechanism causing the waveform behavior is discussed in detail.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit layout; CMOS snapback ESD protection device; DC breakdown voltage; ESD pulse amplitude; residual voltage; turn-off characteristics; waveform behavior; Breakdown voltage; Circuits; Data analysis; EPROM; Electrostatic discharge; MOS devices; Protection; Pulse measurements; Residual stresses; Testing;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2006. EOS/ESD '06.
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-5853-7115-0
