Title :
Compact modeling of vertical ESD protection NPN transistors for RF circuits
Author :
Joshi, Sopan ; Rosenbaum, Elyse
Author_Institution :
Department of Electrical & Computer Engineering · University of Illinois at Urbana-Champaign, 1308 W. Main St., 61801, USA
Abstract :
We present an easy-to-use, simulator-independent compact model of a vertical npn transistor suitable for ESD circuit simulation. In addition to including high-current and breakdown effects, we also model accurately the small-signal off-state impedance of the device using s-parameter measurements, for inclusion in RF circuit simulations. Experimental results are provided for silicon and SiGe npn transistors.
Keywords :
Circuit simulation; Computational modeling; Computer simulation; Electric breakdown; Electrostatic discharge; Hardware design languages; Impedance; Protection; Radio frequency; Virtual colonoscopy;
Conference_Titel :
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location :
Charlotte, NC, USA
Print_ISBN :
978-1-5853-7040-5
Electronic_ISBN :
978-1-5853-7040-5
