Title :
A new ESD model: The Charged Strip Model
Author :
Olney, Andrew ; Righter, Alan ; Belisle, Denis ; Cooper, Elvis
Author_Institution :
Analog Devices, Inc., 804 Woburn Street, M/S 424, Wilmington, MA 01887 USA
Abstract :
Microelectronics packaging and testing are increasingly being conducted on devices in strip form. Once charged, strips may discharge through a pin on one IC. The resulting damage is simulated by a new ESD test method: the Charged Strip Model (CSM). CSM withstand voltages are inversely proportional to strip capacitances. Thus, IC´s that are immune to Charged Device Model (CDM) damage may be susceptible to CSM damage. Since CSM discharge events may have far more energy than other real-world ESD events, CSM damage can be easily mistaken for EOS damage. CSM damage can be minimized via appropriate strip designs and actions to minimize strip charging during manufacturing.
Keywords :
Capacitance; Earth Observing System; Electrostatic discharge; Integrated circuit modeling; Integrated circuit testing; Manufacturing; Microelectronics; Packaging; Strips; Voltage;
Conference_Titel :
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location :
Charlotte, NC, USA
Print_ISBN :
978-1-5853-7040-5
Electronic_ISBN :
978-1-5853-7040-5