DocumentCode
502675
Title
A new ESD model: The Charged Strip Model
Author
Olney, Andrew ; Righter, Alan ; Belisle, Denis ; Cooper, Elvis
Author_Institution
Analog Devices, Inc., 804 Woburn Street, M/S 424, Wilmington, MA 01887 USA
fYear
2002
fDate
6-10 Oct. 2002
Firstpage
163
Lastpage
177
Abstract
Microelectronics packaging and testing are increasingly being conducted on devices in strip form. Once charged, strips may discharge through a pin on one IC. The resulting damage is simulated by a new ESD test method: the Charged Strip Model (CSM). CSM withstand voltages are inversely proportional to strip capacitances. Thus, IC´s that are immune to Charged Device Model (CDM) damage may be susceptible to CSM damage. Since CSM discharge events may have far more energy than other real-world ESD events, CSM damage can be easily mistaken for EOS damage. CSM damage can be minimized via appropriate strip designs and actions to minimize strip charging during manufacturing.
Keywords
Capacitance; Earth Observing System; Electrostatic discharge; Integrated circuit modeling; Integrated circuit testing; Manufacturing; Microelectronics; Packaging; Strips; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location
Charlotte, NC, USA
Print_ISBN
978-1-5853-7040-5
Electronic_ISBN
978-1-5853-7040-5
Type
conf
Filename
5267024
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