Title :
Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies
Author :
Streibl, M. ; Esmark, K. ; Sieck, A. ; Stadler, W. ; Wendel, M. ; Szatkowski, J. ; Goßner, H.
Author_Institution :
Infineon Technologies, P.O.B. 800949, D-81609 Munich, Germany
Abstract :
In an ESD analysis of the radio frequency (RF) npn transistor in three BiCMOS generations the basepushout effect is identified as a dominant factor, causing a characteristically high differential resistance at low and intermediate ESD currents and a second non-thermal snapback leading to the transistors usual low-ohmic breakdown mode. Concepts to exploit the base-pushout effect for improved RF ESD protection schemes are presented.
Keywords :
BiCMOS integrated circuits; Character generation; Electric breakdown; Electrons; Electrostatic discharge; Kirk field collapse effect; Protection; Radio frequency; Radiofrequency identification; Voltage;
Conference_Titel :
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location :
Charlotte, NC, USA
Print_ISBN :
978-1-5853-7040-5
Electronic_ISBN :
978-1-5853-7040-5
