Title :
A novel on-chip ESD protection circuit for GaAs HBT RF power amplifiers
Author :
Ma, Yintat ; Li, G.P.
Author_Institution :
Integrated Nanosystems Research Facility, Department of Electrical and Computer Engineering, University of California, Irvine, 92697, USA
Abstract :
A low capacitance, on-chip Electrostatic Discharge (ESD) protection circuit for GaAs power amplifiers that does not degrade RF circuit performance is introduced. It´s principle of operation, capacitance loading, leakage current, ESD clamping characteristics, and robustness over process variation and temperature will be presented. Finally, a case study of its application to wireless local area network 11.802A, 5.8GHz power amplifier will be discussed.
Keywords :
Capacitance; Circuits; Degradation; Electrostatic discharge; Gallium arsenide; Heterojunction bipolar transistors; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location :
Charlotte, NC, USA
Print_ISBN :
978-1-5853-7040-5
Electronic_ISBN :
978-1-5853-7040-5
