DocumentCode
502687
Title
A novel on-chip ESD protection circuit for GaAs HBT RF power amplifiers
Author
Ma, Yintat ; Li, G.P.
Author_Institution
Integrated Nanosystems Research Facility, Department of Electrical and Computer Engineering, University of California, Irvine, 92697, USA
fYear
2002
fDate
6-10 Oct. 2002
Firstpage
83
Lastpage
91
Abstract
A low capacitance, on-chip Electrostatic Discharge (ESD) protection circuit for GaAs power amplifiers that does not degrade RF circuit performance is introduced. It´s principle of operation, capacitance loading, leakage current, ESD clamping characteristics, and robustness over process variation and temperature will be presented. Finally, a case study of its application to wireless local area network 11.802A, 5.8GHz power amplifier will be discussed.
Keywords
Capacitance; Circuits; Degradation; Electrostatic discharge; Gallium arsenide; Heterojunction bipolar transistors; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location
Charlotte, NC, USA
Print_ISBN
978-1-5853-7040-5
Electronic_ISBN
978-1-5853-7040-5
Type
conf
Filename
5267037
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