Title :
Variable-trigger voltage ESD Power Clamps for mixed voltage applications using a 120 GHz/100 GHz (fT/fMAX) Silicon Germanium Heterojunction Bipolar Transistor with Carbon incorporation
Author :
Voldman, Steven H.
Author_Institution :
IBM Communications Research and Development Center (CRDC), Essex Junction, Vermont 05452, USA
Abstract :
A novel ESD Power Clamps for 40 GHz applications, using a 120 GHz/100 GHz fT/fMAX Silicon Germanium Heterojunction Bipolar Transistor (HBT) with Carbon incorporation, is developed by modification of the circuit to avoid the Johnson Limit constraints for non-native voltage applications. The theory, operation, and ESD results of the ESD power clamp will be shown.
Keywords :
CMOS technology; Circuits; Clamps; Electrostatic discharge; Germanium silicon alloys; Heterojunction bipolar transistors; Power supplies; Radio frequency; Silicon germanium; Voltage;
Conference_Titel :
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location :
Charlotte, NC, USA
Print_ISBN :
978-1-5853-7040-5
Electronic_ISBN :
978-1-5853-7040-5
