Title :
SCR based ESD protection in nanometer SOI technologies
Author :
Marichal, Olivier ; Wybo, Geert ; Van Camp, Benjamin ; Vanysacker, Pieter ; Keppens, Bart
Author_Institution :
Sarnoff Eur., Gistel, Belgium
Abstract :
This paper introduces an SCR based ESD protection design for SOI technologies. It is explained how efficient SCR devices can be constructed in SOI. These devices outperform MOS devices by about 4 times. Experimental data from 65 nm and 130 nm SOI is presented to support this.
Keywords :
electrostatic devices; electrostatic discharge; nanoelectronics; silicon-on-insulator; thyristors; ESD device; SCR-based ESD protection design; Si-SiO2; nanometer SOI technology; size 130 nm; size 65 nm; Electrostatic discharge; Protection; Thyristors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-58537-069-6
Electronic_ISBN :
978-1-58537-069-6
