• DocumentCode
    502995
  • Title

    ESD evaluation of the emerging MuGFET technology

  • Author

    Russ, Christian ; Gossner, Harald ; Schulz, Thomas ; Chaudhary, Nirmal ; Xiong, Weize ; Marshall, Andrew ; Duvvury, Charvaka ; Schruefer, Klaus ; Cleavelin, C. Rinn

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • fYear
    2005
  • fDate
    8-16 Sept. 2005
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    ESD characteristics of fully depleted (FD) FinFET devices are presented and compared to planar structures manufactured in the same multiple-gate FET (MuGFET) technology. FinFET-type MOS devices in breakdown mode are found to show an unprecedented sensitivity to ESD stress, while planar devices and FinFET gated diodes perform reasonably and with I-V characteristics beneficial for ESD protection.
  • Keywords
    MOSFET; electrostatic discharge; semiconductor device breakdown; ESD protection; MuGFET breakdown mode; fully depleted FinFETdevice; multiple-gate FET gated diodes; planar devices; CMOS technology; Charge carriers; Diodes; Electrostatic discharge; FETs; FinFETs; Isolation technology; MOS devices; Manufacturing; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    978-1-58537-069-6
  • Electronic_ISBN
    978-1-58537-069-6
  • Type

    conf

  • Filename
    5271750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=502995