DocumentCode
503018
Title
SCR operation mode of diode strings for ESD protection
Author
Glaser, Ulrich ; Esmark, Kai ; Streibl, Martin ; Russ, Christian ; Domanski, Krzysztof ; Ciappa, Mauro ; Fichtner, Wolfgang
Author_Institution
Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland
fYear
2005
fDate
8-16 Sept. 2005
Firstpage
1
Lastpage
10
Abstract
Diodes and diode strings in 90 nm and beyond technologies are investigated by measurement and device simulation. After a thorough calibration, the device simulator is utilised to achieve a better understanding and an enhanced device performance of diode strings under DC and transient ESD conditions. Thereto, parasitic transistors and a so far neglected parasitic thyristor (SCR) in the diode string are exploited and optimised.
Keywords
diodes; electrostatic discharge; semiconductor device measurement; semiconductor device models; thyristors; ESD protection; SCR operation mode; device simulation; diode strings; measurement; parasitic thyristor; size 90 nm; Anodes; CMOS technology; Calibration; Cathodes; Circuit simulation; Diodes; Electrostatic discharge; Protection; Pulsed power supplies; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location
Tucson, AZ
Print_ISBN
978-1-58537-069-6
Electronic_ISBN
978-1-58537-069-6
Type
conf
Filename
5271817
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