Title :
Physics and design optimization of ESD diode for 0.13μm PD-SOI technology
Author :
Entringer, Christophe ; Flatresse, Philippe ; Salome, Pascal ; Nouet, Pascal ; Azais, Florence
Author_Institution :
ST Microelectron. Crolles, Crolles, France
Abstract :
This paper investigates the physics of 0.13 mum partially depleted SOI gated diodes through TLP measurements and TCAD simulations. The impact of gate length, well type, oxide thickness, gate to contact distance and presence of gate on ESD performance are evaluated and discussed. It is shown that the gate coupling effect decreases ESD performance.
Keywords :
electrostatic devices; electrostatic discharge; semiconductor diodes; silicon-on-insulator; technology CAD (electronics); ESD diode; TCAD simulations; TLP measurements; contact distance; design optimization; gate length; oxide thickness; partially depleted SOI gated diodes; physics; well type; Anodes; Charge carrier processes; Design optimization; Diodes; Electrostatic discharge; Heating; Physics; Silicon; Stress; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-58537-069-6
Electronic_ISBN :
978-1-58537-069-6
