DocumentCode
503025
Title
RF ESD protection strategies: Codesign vs. low-C protection
Author
Soldner, W. ; Streibl, M. ; Hodel, U. ; Tiebout, M. ; Gossner, H. ; Schmitt-Landsiedel, D. ; Chun, J.H. ; Ito, C. ; Dutton, R.W.
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2005
fDate
8-16 Sept. 2005
Firstpage
1
Lastpage
10
Abstract
The present work is focussed on the trade off between conventional RF ESD protection concepts optimized in terms of capacitive load and the frequently discussed RF ESD codesign idea with ESD protection skilfully integrated into RF circuit design. A narrow and a broadband RF test circuit were developed to put the benchmark on a firm basis. RF and ESD experiments are discussed, showing where the higher effort for the codesign approach starts to pay off.
Keywords
electrostatic discharge; integrated circuit design; integrated circuit testing; radiofrequency integrated circuits; RF ESD protection strategy; RF circuit design; broadband RF test circuit; capacitive load; low-c protection; radiofrequency ESD codesign; CMOS technology; Circuit synthesis; Circuit testing; Electrostatic discharge; Niobium; Parasitic capacitance; Production; Protection; Radio frequency; Robustness;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location
Tucson, AZ
Print_ISBN
978-1-58537-069-6
Electronic_ISBN
978-1-58537-069-6
Type
conf
Filename
5271824
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