DocumentCode
503028
Title
Selecting an appropriate esd protection for discrete RF power LDMOSTs
Author
Smedes, T. ; de Boet, J. ; Rödle, T.
Author_Institution
Philips Semicond., Nijmegen, Netherlands
fYear
2005
fDate
8-16 Sept. 2005
Firstpage
1
Lastpage
8
Abstract
For ESD protections of RF Power MOSTs, Vt1 lowering by the RF signal, -due to the dV/dt effect-, can seriously degrade the RF performance. The use of a cascoded protection solves this problem. A new failure mechanism, related to the discharge of on-chip RF matching capacitors is presented. Adding a current limiting resistor in the protection solves this issue. Combining these solutions yields an appropriate protection for discrete RF power LDMOSTs.
Keywords
UHF field effect transistors; electrostatic discharge; power MOSFET; ESD protection; current limiting resistor; discrete RF power LDMOST; dv-dt effect; frequency 800 MHz to 2200 MHz; laterally diffused metal-oxide-semiconductor transistor; on-chip RF matching capacitors; Appropriate technology; Capacitors; Electrostatic discharge; Failure analysis; Inductors; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers; Robustness;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location
Tucson, AZ
Print_ISBN
978-1-58537-069-6
Electronic_ISBN
978-1-58537-069-6
Type
conf
Filename
5271828
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