Title :
Test circuits for fast and reliable assessment of CDM robustness of I/O stages
Author :
Stadler, W. ; Esmark, K. ; Reynders, K. ; Zubeidat, M. ; Graf, M. ; Wilkening, Wolfgang ; Willemen, J. ; Qu, N. ; Mettler, S. ; Etherton, M. ; Nuernbergk, D. ; Wolf, H. ; Gieser, H. ; Soppa, W. ; De Heyn, V. ; Natarajan, M. ; Groeseneken, Guido ; Morena,
Author_Institution :
CL DAT LIB IO, Infineon Technol., Munich, Germany
Abstract :
CDM hardening during the development of technology, devices, libraries and finally products differs significantly from the process well-established for HBM. This paper introduces a method on the basis of specialized CDM test structures including protection elements and sensitive monitor elements. These test structures mimic typical CDM-sensitive circuits found by physical failure analysis over the years. Manufactured in five different technologies, structures were assembled in both a regular package and a new package emulator. CDM stress tests, vf-TLP tests, backside laser interferometry, device simulation, and failure analysis lead to new insights in the complex interdependencies during CDM and underline the need of CDM-specific test structures.
Keywords :
charge-coupled devices; circuit testing; light interferometry; CDM robustness; HBM; I/O stages; backside laser interferometry; charged device model; test circuits; vf-TLP tests; Assembly; Circuit testing; Condition monitoring; Failure analysis; Libraries; Manufacturing; Packaging; Protection; Robustness; Stress;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-5853-7057-3
Electronic_ISBN :
978-1-5853-7057-3