Title :
Coupled bipolar transistors as very robust ESD protection devices for automotive applications
Author :
Jensen, Nils ; Groos, Gerhard ; Denison, Marie ; Kuzmik, Jan ; Pogany, Dionyz ; Gornik, Erich ; Stecher, Matthias
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
ESD requirements for automotive applications are demanding and diverse. Coupled bipolar ESD protection devices within a BCD technology are realized having a system level HBM-gun (330 Omega/150 pF) robustness of more than 10 kV with the thyristor mode being avoided. The change from rectangular to circular device geometry leads to an increase in device robustness with respect to device level HBM tests and long time current pulses.
Keywords :
automotive electronics; bipolar transistors; coupled circuits; electrostatic devices; electrostatic discharge; BCD technology; automotive electronic applications; coupled bipolar transistors; robust ESD protection devices; thyristor mode; Automotive applications; Bipolar transistors; Breakdown voltage; Electrostatic discharge; Geometry; Protection; Robustness; Stress; Temperature distribution; Thyristors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-5853-7057-3
Electronic_ISBN :
978-1-5853-7057-3
