• DocumentCode
    503045
  • Title

    Coupled bipolar transistors as very robust ESD protection devices for automotive applications

  • Author

    Jensen, Nils ; Groos, Gerhard ; Denison, Marie ; Kuzmik, Jan ; Pogany, Dionyz ; Gornik, Erich ; Stecher, Matthias

  • Author_Institution
    Infineon Technol., Munich, Germany
  • fYear
    2003
  • fDate
    21-25 Sept. 2003
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    ESD requirements for automotive applications are demanding and diverse. Coupled bipolar ESD protection devices within a BCD technology are realized having a system level HBM-gun (330 Omega/150 pF) robustness of more than 10 kV with the thyristor mode being avoided. The change from rectangular to circular device geometry leads to an increase in device robustness with respect to device level HBM tests and long time current pulses.
  • Keywords
    automotive electronics; bipolar transistors; coupled circuits; electrostatic devices; electrostatic discharge; BCD technology; automotive electronic applications; coupled bipolar transistors; robust ESD protection devices; thyristor mode; Automotive applications; Bipolar transistors; Breakdown voltage; Electrostatic discharge; Geometry; Protection; Robustness; Stress; Temperature distribution; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    978-1-5853-7057-3
  • Electronic_ISBN
    978-1-5853-7057-3
  • Type

    conf

  • Filename
    5272008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503045