Title :
Active-area-segmentation (AAS) technique for compact, ESD robust, fully silicided NMOS design
Author :
Keppens, Bart ; Mergens, Markus P J ; Armer, John ; Jozwiak, Phillip C. ; Taylor, Gordon ; Mohn, Russ ; Trinh, Cong Son ; Russ, Christian C. ; Verhaege, Koen G. ; De Ranter, Frederic
Author_Institution :
Sarnoff Eur., Gistel, Belgium
Abstract :
This paper describes a layout technique to optimize the ESD performance per area for fully silicided NMOS devices by segmenting the active area of drain and source regions. Efficient multi finger triggering is achieved by intrinsic inter-finger-coupling through the bulk enabled by compact finger design. The technique is successfully applied in a 0.13 um and a 0.18 um CMOS technology obtaining HBM ESD capability of up to 8.6 V/um2.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit layout; CMOS; ESD performance optimisation; HBM ESD; active-area-segmentation technique; compact finger design; intrinsic inter-finger-coupling; layout technique; multifinger triggering; silicided NMOS design; size 0.13 mum; size 0.18 mum; CMOS technology; Costs; Electronic ballasts; Electrostatic discharge; Europe; Fingers; MOS devices; Protection; Robustness; Silicides;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
Conference_Location :
Las Vegas, NB
Print_ISBN :
978-1-5853-7057-3
Electronic_ISBN :
978-1-5853-7057-3
