Title :
A study of vertical SiGe thyristor design and optimization
Author :
Joshi, Sopan ; Ida, Richard ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
We present extensive measurement results investigating the design and optimization of vertical SiGe thyristors for use as ESD protection elements in RF integrated circuits. Experiments include variations of the anode material, contact geometry, and buried layer, as well as a detailed study of optimal area scaling. RF characterization using s-parameter data is presented.
Keywords :
S-parameters; anodes; buried layers; electrostatic discharge; optimisation; radiofrequency integrated circuits; silicon compounds; thyristors; ESD protection element; RF characterization; RF integrated circuit; SiGe; anode material; buried layer; contact geometry; optimization; s-parameter data; semiconductor controlled rectifier; vertical thyristor design; Anodes; Design optimization; Electrostatic discharge; Germanium silicon alloys; Integrated circuit measurements; Protection; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Thyristors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-5853-7057-3
Electronic_ISBN :
978-1-5853-7057-3
