DocumentCode
503070
Title
ESD phenomena in interconnect structures
Author
Smedes, T. ; Li, Y.
Author_Institution
Philips Semicond., Nijmegen, Netherlands
fYear
2003
fDate
21-25 Sept. 2003
Firstpage
1
Lastpage
8
Abstract
Interconnect forms a part of all ESD protection networks. ESD discharges can cause both latent and permanent damages in interconnect structures. ESD discharges, that barely affect the resistance of a structure, can reduce the electromigration lifetime of metal structures by more than a factor 100. Also snapback behavior, which limits the ESD robustness of silicon based interconnect structures, is observed. With this knowledge designs can be optimized for area and robustness.
Keywords
electromigration; electrostatic discharge; integrated circuit interconnections; radiation hardening (electronics); silicon; ESD phenomena; ESD protection networks; ESD robustness limitation; Si; electromigration lifetime reduction; metal based interconnect structural damage; silicon based interconnect structural damage; snapback behavior; Electrical resistance measurement; Electromigration; Electrostatic discharge; Immune system; Integrated circuit interconnections; Protection; Pulse measurements; Robustness; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
Conference_Location
Las Vegas, NV
Print_ISBN
978-1-5853-7057-3
Electronic_ISBN
978-1-5853-7057-3
Type
conf
Filename
5272033
Link To Document