Characterization and modeling of transient device behavior under CDM ESD stress

Author

Willemen, J. ; Andreini, A. ; De Heyn, V. ; Esmark, K. ; Etherton, M. ; Gieser, H. ; Groeseneken, G. ; Mettler, S. ; Morena, E. ; Qu, N. ; Soppa, W. ; Stadler, W. ; Stella, R. ; Wilkening, W. ; Wolf, H. ; Zullino, L.

Author_Institution

Robert Bosch GmbH, Reutlingen, Germany

fYear

2003

fDate

21-25 Sept. 2003

Firstpage

1

Lastpage

10

Abstract

Device physical effects that strongly influence the transient behavior during very fast, high current pulses are discussed. The effects are studied by experimental characterization and device simulation. The dependence on the technology (deep-sub-micron, smart-power/high-voltage) is considered as well. Compact models for CDM circuit simulation are developed.

Keywords

circuit simulation; electrostatic discharge; semiconductor device models; CDM ESD stress; CDM circuit simulation; charged device model; deep-sub-micron; device physical effects; smart-power/high-voltage; transient device behavior; Analytical models; Biological system modeling; Circuit simulation; Electrostatic discharge; Failure analysis; Predictive models; Pulse measurements; Robustness; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.

Conference_Location

Las Vegas, NV

Print_ISBN

978-1-5853-7057-3

Electronic_ISBN

978-1-5853-7057-3

Type

conf

Filename

5272035