Title :
Characterization and modeling of transient device behavior under CDM ESD stress
Author :
Willemen, J. ; Andreini, A. ; De Heyn, V. ; Esmark, K. ; Etherton, M. ; Gieser, H. ; Groeseneken, G. ; Mettler, S. ; Morena, E. ; Qu, N. ; Soppa, W. ; Stadler, W. ; Stella, R. ; Wilkening, W. ; Wolf, H. ; Zullino, L.
Author_Institution :
Robert Bosch GmbH, Reutlingen, Germany
Abstract :
Device physical effects that strongly influence the transient behavior during very fast, high current pulses are discussed. The effects are studied by experimental characterization and device simulation. The dependence on the technology (deep-sub-micron, smart-power/high-voltage) is considered as well. Compact models for CDM circuit simulation are developed.
Keywords :
circuit simulation; electrostatic discharge; semiconductor device models; CDM ESD stress; CDM circuit simulation; charged device model; deep-sub-micron; device physical effects; smart-power/high-voltage; transient device behavior; Analytical models; Biological system modeling; Circuit simulation; Electrostatic discharge; Failure analysis; Predictive models; Pulse measurements; Robustness; Stress; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-5853-7057-3
Electronic_ISBN :
978-1-5853-7057-3
